Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and Beyond
In this paper, we propose the extendibility of ultra-thin body and box (UTBB) devices to 7 and 5 nm technology nodes focusing on electrostatics. A difficulty in scaling traditional UTBB is the need for SOI scaling to about one fourth of the gate length. We propose a U-channel fully depleted silicon...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8302502/ |