Transmission Line on Semiconductor Substrate with Distributed Amplification

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in highintensity electric field. The simple model of the active media is developed and use...

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Bibliographic Details
Main Authors:	M. Pokorny, Z. Raida
Format:	Article
Language:	English
Published:	Spolecnost pro radioelektronicke inzenyrstvi 2010-06-01
Series:	Radioengineering
Subjects:	GaAs active mictrostrip millimeter-wave Gunn’s effect thermal COMSOL
Online Access:	http://www.radioeng.cz/fulltexts/2010/10_02_307_312.pdf

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spelling	doaj-f35fdf2a28b14c6da21dfc26abca20992020-11-25T00:35:30ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122010-06-01192307312Transmission Line on Semiconductor Substrate with Distributed AmplificationM. PokornyZ. RaidaIn order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in highintensity electric field. The simple model of the active media is developed and used for calculation of the propagation properties of the fundamental mode and for the thermal analysis of the device. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime. www.radioeng.cz/fulltexts/2010/10_02_307_312.pdfGaAsactivemictrostripmillimeter-waveGunn’s effectthermalCOMSOL
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	M. Pokorny Z. Raida
spellingShingle	M. Pokorny Z. Raida Transmission Line on Semiconductor Substrate with Distributed Amplification Radioengineering GaAs active mictrostrip millimeter-wave Gunn’s effect thermal COMSOL
author_facet	M. Pokorny Z. Raida
author_sort	M. Pokorny
title	Transmission Line on Semiconductor Substrate with Distributed Amplification
title_short	Transmission Line on Semiconductor Substrate with Distributed Amplification
title_full	Transmission Line on Semiconductor Substrate with Distributed Amplification
title_fullStr	Transmission Line on Semiconductor Substrate with Distributed Amplification
title_full_unstemmed	Transmission Line on Semiconductor Substrate with Distributed Amplification
title_sort	transmission line on semiconductor substrate with distributed amplification
publisher	Spolecnost pro radioelektronicke inzenyrstvi
series	Radioengineering
issn	1210-2512
publishDate	2010-06-01
description	In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in highintensity electric field. The simple model of the active media is developed and used for calculation of the propagation properties of the fundamental mode and for the thermal analysis of the device. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.
topic	GaAs active mictrostrip millimeter-wave Gunn’s effect thermal COMSOL
url	http://www.radioeng.cz/fulltexts/2010/10_02_307_312.pdf
work_keys_str_mv	AT mpokorny transmissionlineonsemiconductorsubstratewithdistributedamplification AT zraida transmissionlineonsemiconductorsubstratewithdistributedamplification
_version_	1725308842080731136

Transmission Line on Semiconductor Substrate with Distributed Amplification

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