An Innovative Method to Improve Model Accuracy by Implementing Multi-models Scheme for 28nm Node and Below

As the process comes into 28nm node and below, lithography struggles stronger between high resolution (high NA) and enough process window especially for hole layers (Contacts and Vias). Taking more care of process window may result in lower image quality of structures and bigger uncertainty in OPC m...

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Bibliographic Details
Main Authors: Qingchen Cao, Tianhui Li, Shuying Wang, Deyuan Xiao
Format: Article
Language:English
Published: JommPublish 2019-09-01
Series:Journal of Microelectronic Manufacturing
Subjects:
Online Access:http://www.jommpublish.org/p/35/#