Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at rela...

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Main Authors: Mitali Swain, Surendra Singh, Debarati Bhattacharya, Ajay Singh, R.B. Tokas, C. L. Prajapat, Saibal Basu
Format: Article
Language:English
Published: AIP Publishing LLC 2015-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4926843
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spelling doaj-f348bddac8304f7f8b01bd3b4aabc7562020-11-25T01:03:47ZengAIP Publishing LLCAIP Advances2158-32262015-07-0157077129077129-910.1063/1.4926843030507ADVMicro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayerMitali Swain0Surendra Singh1Debarati Bhattacharya2Ajay Singh3R.B. Tokas4C. L. Prajapat5Saibal Basu6Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIASolid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIASolid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIATechnical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIAAtomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIATechnical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIASolid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, INDIANickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50%) on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.http://dx.doi.org/10.1063/1.4926843
collection DOAJ
language English
format Article
sources DOAJ
author Mitali Swain
Surendra Singh
Debarati Bhattacharya
Ajay Singh
R.B. Tokas
C. L. Prajapat
Saibal Basu
spellingShingle Mitali Swain
Surendra Singh
Debarati Bhattacharya
Ajay Singh
R.B. Tokas
C. L. Prajapat
Saibal Basu
Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer
AIP Advances
author_facet Mitali Swain
Surendra Singh
Debarati Bhattacharya
Ajay Singh
R.B. Tokas
C. L. Prajapat
Saibal Basu
author_sort Mitali Swain
title Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer
title_short Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer
title_full Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer
title_fullStr Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer
title_full_unstemmed Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer
title_sort micro-structural characterization of low resistive metallic ni germanide growth on annealing of ni-ge multilayer
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-07-01
description Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50%) on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.
url http://dx.doi.org/10.1063/1.4926843
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