Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and...

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Main Authors: Biljana Simić, Dejan Nikolić, Koviljka Stanković, Ljubinko Timotijević, Srboljub Stanković
Format: Article
Language:English
Published: Hindawi Limited 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/582819
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spelling doaj-f33a808d6b994b3c948a3f9b50c9fc7f2020-11-24T22:55:56ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/582819582819Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and PhototransistorsBiljana Simić0Dejan Nikolić1Koviljka Stanković2Ljubinko Timotijević3Srboljub Stanković4Faculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11000 Belgrade, SerbiaVinča Institute of Nuclear Sciences, University of Belgrade, Mike Petrovica Alasa 12-14, 11000 Belgrade, SerbiaThis study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.http://dx.doi.org/10.1155/2013/582819
collection DOAJ
language English
format Article
sources DOAJ
author Biljana Simić
Dejan Nikolić
Koviljka Stanković
Ljubinko Timotijević
Srboljub Stanković
spellingShingle Biljana Simić
Dejan Nikolić
Koviljka Stanković
Ljubinko Timotijević
Srboljub Stanković
Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
International Journal of Photoenergy
author_facet Biljana Simić
Dejan Nikolić
Koviljka Stanković
Ljubinko Timotijević
Srboljub Stanković
author_sort Biljana Simić
title Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
title_short Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
title_full Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
title_fullStr Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
title_full_unstemmed Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
title_sort damage induced by neutron radiation on output characteristics of solar cells, photodiodes, and phototransistors
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2013-01-01
description This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7×106 n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.
url http://dx.doi.org/10.1155/2013/582819
work_keys_str_mv AT biljanasimic damageinducedbyneutronradiationonoutputcharacteristicsofsolarcellsphotodiodesandphototransistors
AT dejannikolic damageinducedbyneutronradiationonoutputcharacteristicsofsolarcellsphotodiodesandphototransistors
AT koviljkastankovic damageinducedbyneutronradiationonoutputcharacteristicsofsolarcellsphotodiodesandphototransistors
AT ljubinkotimotijevic damageinducedbyneutronradiationonoutputcharacteristicsofsolarcellsphotodiodesandphototransistors
AT srboljubstankovic damageinducedbyneutronradiationonoutputcharacteristicsofsolarcellsphotodiodesandphototransistors
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