Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization

In this work, the effect of water adsorption on the electrical properties of graphene oxide (GO) and Amide functionalized graphene oxide (AGO) was studied using direct current measurements. AGO was synthesized by chemical method at room temperature. Fourier transform infrared spectroscopy, X-ray dif...

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Main Authors: Sumita RANI, Dinesh KUMAR, Mukesh KUMAR
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2015-10-01
Series:Sensors & Transducers
Subjects:
Online Access:http://www.sensorsportal.com/HTML/DIGEST/october_2015/Vol_193/P_2742.pdf
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spelling doaj-f3146a55940b48cf9f959de813f797b82020-11-25T00:14:26ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792015-10-0119310100105Improvement in Humidity Sensing of Graphene Oxide by Amide FunctionalizationSumita RANI0Dinesh KUMAR1Mukesh KUMAR2Electronic Science Department, Kurukshetra University Kurukshetra, Haryana, IndiaElectronic Science Department, Kurukshetra University Kurukshetra, Haryana, IndiaElectronic Science Department, Kurukshetra University Kurukshetra, Haryana, IndiaIn this work, the effect of water adsorption on the electrical properties of graphene oxide (GO) and Amide functionalized graphene oxide (AGO) was studied using direct current measurements. AGO was synthesized by chemical method at room temperature. Fourier transform infrared spectroscopy, X-ray diffraction and scanning electron microscopy measurements were carried out to verify the functionalization of GO. The films of GO and AGO between aluminum electrodes on SiO2/p-Si (100) substrate were formed by drop casting method. The variation in the I-V characteristics was recorded at different humidity level. It has been observed that the interaction between water molecules with AGO was more as compared to GO. It was reported that electrical properties of GO and AGO are humidity and applied voltage dependent. At low humidity level the response of GO sensor was poor, however at high humidity the conductivity of GO increases. Compared to GO, AGO shows good response. The resistance of the AGO film was approximately 9.87 kW at 10 % relative humidity (RH), and decreases to 1.5 kW at 90 % RH. http://www.sensorsportal.com/HTML/DIGEST/october_2015/Vol_193/P_2742.pdfAmide functionalized graphene oxideGraphene oxideRelative humidity sensingI-V characteristics.
collection DOAJ
language English
format Article
sources DOAJ
author Sumita RANI
Dinesh KUMAR
Mukesh KUMAR
spellingShingle Sumita RANI
Dinesh KUMAR
Mukesh KUMAR
Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization
Sensors & Transducers
Amide functionalized graphene oxide
Graphene oxide
Relative humidity sensing
I-V characteristics.
author_facet Sumita RANI
Dinesh KUMAR
Mukesh KUMAR
author_sort Sumita RANI
title Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization
title_short Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization
title_full Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization
title_fullStr Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization
title_full_unstemmed Improvement in Humidity Sensing of Graphene Oxide by Amide Functionalization
title_sort improvement in humidity sensing of graphene oxide by amide functionalization
publisher IFSA Publishing, S.L.
series Sensors & Transducers
issn 2306-8515
1726-5479
publishDate 2015-10-01
description In this work, the effect of water adsorption on the electrical properties of graphene oxide (GO) and Amide functionalized graphene oxide (AGO) was studied using direct current measurements. AGO was synthesized by chemical method at room temperature. Fourier transform infrared spectroscopy, X-ray diffraction and scanning electron microscopy measurements were carried out to verify the functionalization of GO. The films of GO and AGO between aluminum electrodes on SiO2/p-Si (100) substrate were formed by drop casting method. The variation in the I-V characteristics was recorded at different humidity level. It has been observed that the interaction between water molecules with AGO was more as compared to GO. It was reported that electrical properties of GO and AGO are humidity and applied voltage dependent. At low humidity level the response of GO sensor was poor, however at high humidity the conductivity of GO increases. Compared to GO, AGO shows good response. The resistance of the AGO film was approximately 9.87 kW at 10 % relative humidity (RH), and decreases to 1.5 kW at 90 % RH.
topic Amide functionalized graphene oxide
Graphene oxide
Relative humidity sensing
I-V characteristics.
url http://www.sensorsportal.com/HTML/DIGEST/october_2015/Vol_193/P_2742.pdf
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AT dineshkumar improvementinhumiditysensingofgrapheneoxidebyamidefunctionalization
AT mukeshkumar improvementinhumiditysensingofgrapheneoxidebyamidefunctionalization
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