Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs

Negative capacitance (NC) germanium (Ge) p-channel field effect transistors with different ferroelectric parameters are investigated by the analytical model. The channel surface potential amplification induced by the NC effect, which determines the subthreshold swing (SS) and the drain current I<...

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Bibliographic Details
Main Authors: Yue Peng, Genquan Han, Zhibin Chen, Qinglong Li, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FET
Online Access:https://ieeexplore.ieee.org/document/8259272/

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