Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs
Negative capacitance (NC) germanium (Ge) p-channel field effect transistors with different ferroelectric parameters are investigated by the analytical model. The channel surface potential amplification induced by the NC effect, which determines the subthreshold swing (SS) and the drain current I<...
Main Authors: | Yue Peng, Genquan Han, Zhibin Chen, Qinglong Li, Jincheng Zhang, Yue Hao |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8259272/ |
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