Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs

• Main Authors: Yue Peng, Genquan Han, Zhibin Chen, Qinglong Li, Jincheng Zhang, Yue Hao
• Format: Article
• Language: English
• Published: IEEE 2018-01-01
• Series: IEEE Journal of the Electron Devices Society
• Subjects: Negative capacitance; FET; germanium; ferroelectric; hysteresis
• Online Access: https://ieeexplore.ieee.org/document/8259272/

Negative capacitance (NC) germanium (Ge) p-channel field effect transistors with different ferroelectric parameters are investigated by the analytical model. The channel surface potential amplification induced by the NC effect, which determines the subthreshold swing (SS) and the drain current I_DS of the device, can be tuned by varying the thickness t_fe, the coercive field E_c, and the remnant polarization P_r of the ferroelectric film. For the logic device, hysteresis phenomenon must be avoided, which is enabled by reducing t_fe or E_c of the ferroelectric film. Under the condition of t_fe = 30 nm, E_c = 30 KV/cm, and P_r = 30 μC/cm², NC Ge transistors display the superior SS and I_DS compared to the baseline FETs.