GaN nanorods grown on Si (111) substrates and exciton localization

GaN nanorods grown on Si (111) substrates and exciton localization

<p>Abstract</p> <p>We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower ener...

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Main Authors: Holmes Mark, Taylor Robert, Shon Y, Yoon Im, Park Young, Im Hyunsik
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/81
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spelling doaj-f1acb2923c8048cd91599d185941f3d62020-11-24T22:16:23ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-016181GaN nanorods grown on Si (111) substrates and exciton localizationHolmes MarkTaylor RobertShon YYoon ImPark YoungIm Hyunsik<p>Abstract</p> <p>We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (<it>I</it><sub>1</sub>). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the <it>I</it><sub>1 </sub>and <it>I</it><sub>2 </sub>transitions were measured to be &lt; 100 ps due to enhanced surface recombination.</p> <p>PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd</p> http://www.nanoscalereslett.com/content/6/1/81
collection DOAJ
language English
format Article
sources DOAJ
author Holmes Mark
Taylor Robert
Shon Y
Yoon Im
Park Young
Im Hyunsik
spellingShingle Holmes Mark
Taylor Robert
Shon Y
Yoon Im
Park Young
Im Hyunsik
GaN nanorods grown on Si (111) substrates and exciton localization
Nanoscale Research Letters
author_facet Holmes Mark
Taylor Robert
Shon Y
Yoon Im
Park Young
Im Hyunsik
author_sort Holmes Mark
title GaN nanorods grown on Si (111) substrates and exciton localization
title_short GaN nanorods grown on Si (111) substrates and exciton localization
title_full GaN nanorods grown on Si (111) substrates and exciton localization
title_fullStr GaN nanorods grown on Si (111) substrates and exciton localization
title_full_unstemmed GaN nanorods grown on Si (111) substrates and exciton localization
title_sort gan nanorods grown on si (111) substrates and exciton localization
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2011-01-01
description <p>Abstract</p> <p>We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (<it>I</it><sub>1</sub>). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the <it>I</it><sub>1 </sub>and <it>I</it><sub>2 </sub>transitions were measured to be &lt; 100 ps due to enhanced surface recombination.</p> <p>PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd</p>
url http://www.nanoscalereslett.com/content/6/1/81
work_keys_str_mv AT holmesmark gannanorodsgrownonsi111substratesandexcitonlocalization
AT taylorrobert gannanorodsgrownonsi111substratesandexcitonlocalization
AT shony gannanorodsgrownonsi111substratesandexcitonlocalization
AT yoonim gannanorodsgrownonsi111substratesandexcitonlocalization
AT parkyoung gannanorodsgrownonsi111substratesandexcitonlocalization
AT imhyunsik gannanorodsgrownonsi111substratesandexcitonlocalization
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