Design of the ZnS/Ge/GaSe pn interfaces as plasmonic, photovoltaic and microwave band stop filters
In the current work, we report and discuss the features of the design of a ZnS (300 nm)/Ge (300 nm)/GaSe (300 nm) thin film device. The device is characterized by the X-ray diffraction, electron microscopy, energy dispersive X-ray spectroscopy (EDS), optical spectroscopy, microwave power spectroscop...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2017-01-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379717320260 |