Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition

Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition

The CuxSi1−x thin films have been successfully fabricated by pulsed laser deposition (PLD). The influences of laser energy fluency (I0) and deposition temperature (Td) on the phase structure were investigated. The results show that Cu deposited on Si (001) at I0 = 0.5-2.0 J/cm2, and η”-Cu3Si formed...

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Bibliographic Details
Main Authors:	Song Zhang, Jun Wu, Zhiqiang He, Jun Xie, Jingqi Lu, Rong Tu, Lianmeng Zhang, Ji Shi
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4948976

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