A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions
Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-07-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/12/15/2412 |