A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity
In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodio...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-06-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/16/7/999 |