Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure
Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in work-function variation (WFV) effects, which means...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-08-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/10/15/5378 |