N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The inter...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4905781 |