N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The inter...
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doaj-efc2a0a51f4f4c1bafeca4a4fc1c06532020-11-24T22:24:21ZengAIP Publishing LLCAIP Advances2158-32262015-01-0151017109017109-1110.1063/1.4905781008501ADVN-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfacesHironori Yoshioka0Junji Senzaki1Atsushi Shimozato2Yasunori Tanaka3Hajime Okumura4R&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, JapanR&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, JapanAdvanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, JapanR&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, JapanR&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, Japan We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The interface state density over a very shallow range from the conduction band edge (0.00 eV < EC − ET) was evaluated on the basis of the subthreshold slope deterioration at low temperatures (11 K < T). The interface state density continued to increase toward EC, and DIT at EC was significantly higher than the value at the conventionally evaluated energies (EC − ET = 0.1–0.3 eV). The peak field-effect mobility at 300 K was clearly inversely proportional to DIT at 0.00 eV, regardless of the crystal faces and the oxidation/annealing processes. http://dx.doi.org/10.1063/1.4905781 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hironori Yoshioka Junji Senzaki Atsushi Shimozato Yasunori Tanaka Hajime Okumura |
spellingShingle |
Hironori Yoshioka Junji Senzaki Atsushi Shimozato Yasunori Tanaka Hajime Okumura N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces AIP Advances |
author_facet |
Hironori Yoshioka Junji Senzaki Atsushi Shimozato Yasunori Tanaka Hajime Okumura |
author_sort |
Hironori Yoshioka |
title |
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces |
title_short |
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces |
title_full |
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces |
title_fullStr |
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces |
title_full_unstemmed |
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces |
title_sort |
n-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of sio2/4h-sic interfaces |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-01-01 |
description |
We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The interface state density over a very shallow range from the conduction band edge (0.00 eV < EC − ET) was evaluated on the basis of the subthreshold slope deterioration at low temperatures (11 K < T). The interface state density continued to increase toward EC, and DIT at EC was significantly higher than the value at the conventionally evaluated energies (EC − ET = 0.1–0.3 eV). The peak field-effect mobility at 300 K was clearly inversely proportional to DIT at 0.00 eV, regardless of the crystal faces and the oxidation/annealing processes.
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url |
http://dx.doi.org/10.1063/1.4905781 |
work_keys_str_mv |
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