N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces

We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The inter...

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Main Authors: Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura
Format: Article
Language:English
Published: AIP Publishing LLC 2015-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4905781
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spelling doaj-efc2a0a51f4f4c1bafeca4a4fc1c06532020-11-24T22:24:21ZengAIP Publishing LLCAIP Advances2158-32262015-01-0151017109017109-1110.1063/1.4905781008501ADVN-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfacesHironori Yoshioka0Junji Senzaki1Atsushi Shimozato2Yasunori Tanaka3Hajime Okumura4R&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, JapanR&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, JapanAdvanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, JapanR&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, JapanR&D Partnership for Future Power Electronics Technology, Tsukuba 305-8569, Japan We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The interface state density over a very shallow range from the conduction band edge (0.00 eV < EC − ET) was evaluated on the basis of the subthreshold slope deterioration at low temperatures (11 K < T). The interface state density continued to increase toward EC, and DIT at EC was significantly higher than the value at the conventionally evaluated energies (EC − ET = 0.1–0.3 eV). The peak field-effect mobility at 300 K was clearly inversely proportional to DIT at 0.00 eV, regardless of the crystal faces and the oxidation/annealing processes. http://dx.doi.org/10.1063/1.4905781
collection DOAJ
language English
format Article
sources DOAJ
author Hironori Yoshioka
Junji Senzaki
Atsushi Shimozato
Yasunori Tanaka
Hajime Okumura
spellingShingle Hironori Yoshioka
Junji Senzaki
Atsushi Shimozato
Yasunori Tanaka
Hajime Okumura
N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
AIP Advances
author_facet Hironori Yoshioka
Junji Senzaki
Atsushi Shimozato
Yasunori Tanaka
Hajime Okumura
author_sort Hironori Yoshioka
title N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
title_short N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
title_full N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
title_fullStr N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
title_full_unstemmed N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
title_sort n-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of sio2/4h-sic interfaces
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-01-01
description We investigated the effects of the interface state density (DIT) at the interfaces between SiO2 and the Si-, C-, and a-faces of 4H-SiC in n-channel metal-oxide-semiconductor field-effect transistors that were subjected to dry/nitridation and pyrogenic/hydrotreatment processes. The interface state density over a very shallow range from the conduction band edge (0.00 eV < EC − ET) was evaluated on the basis of the subthreshold slope deterioration at low temperatures (11 K < T). The interface state density continued to increase toward EC, and DIT at EC was significantly higher than the value at the conventionally evaluated energies (EC − ET = 0.1–0.3 eV). The peak field-effect mobility at 300 K was clearly inversely proportional to DIT at 0.00 eV, regardless of the crystal faces and the oxidation/annealing processes.
url http://dx.doi.org/10.1063/1.4905781
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