Radiation Tolerance and Charge Trapping Enhancement of ALD HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Nanolaminated Dielectrics

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Nanolaminated Dielectrics

High-<i>k</i> dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (amon...

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Bibliographic Details
Main Authors: Dencho Spassov, Albena Paskaleva, Elżbieta Guziewicz, Vojkan Davidović, Srboljub Stanković, Snežana Djorić-Veljković, Tzvetan Ivanov, Todor Stanchev, Ninoslav Stojadinović
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Materials
Subjects:
radiation hardness
high-<i>k</i> dielectrics
charge trapping memories
HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminates
atomic layer deposition (ALD)
Online Access:https://www.mdpi.com/1996-1944/14/4/849

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https://www.mdpi.com/1996-1944/14/4/849

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