The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition

α-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the g...

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Main Authors:	Tatsuya Yasuoka, Li Liu, Tamako Ozaki, Kanta Asako, Yuna Ishikawa, Miyabi Fukue, Giang T. Dang, Toshiyuki Kawaharamura
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2021-04-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0051050

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spelling	doaj-eebbd813a2e844bfbdf1252ae279a1b92021-05-04T14:07:17ZengAIP Publishing LLCAIP Advances2158-32262021-04-01114045123045123-610.1063/5.0051050The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor depositionTatsuya Yasuoka0Li Liu1Tamako Ozaki2Kanta Asako3Yuna Ishikawa4Miyabi Fukue5Giang T. Dang6Toshiyuki Kawaharamura7Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanSchool of System Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanGraduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanResearch Institute, Kochi University of Technology, Kami, Kochi 782-8502, JapanSchool of System Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japanα-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the growth rate, purity, and surface roughness of α-Ga2O3 films. The growth rate increased with the HCl supply. The thickness, surface roughness, and chemical state analyses indicate that three growth modes occurred depending on the Ga supply rate and HCl/Ga supply ratio and the purity was improved by optimizing the HCl/Ga supply ratio and Ga supply rate.http://dx.doi.org/10.1063/5.0051050
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tatsuya Yasuoka Li Liu Tamako Ozaki Kanta Asako Yuna Ishikawa Miyabi Fukue Giang T. Dang Toshiyuki Kawaharamura
spellingShingle	Tatsuya Yasuoka Li Liu Tamako Ozaki Kanta Asako Yuna Ishikawa Miyabi Fukue Giang T. Dang Toshiyuki Kawaharamura The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition AIP Advances
author_facet	Tatsuya Yasuoka Li Liu Tamako Ozaki Kanta Asako Yuna Ishikawa Miyabi Fukue Giang T. Dang Toshiyuki Kawaharamura
author_sort	Tatsuya Yasuoka
title	The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
title_short	The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
title_full	The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
title_fullStr	The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
title_full_unstemmed	The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition
title_sort	effect of hcl on the α-ga2o3 thin films fabricated by third generation mist chemical vapor deposition
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2021-04-01
description	α-Ga2O3 thin films were grown on a c-plane sapphire substrate by a third generation mist chemical vapor deposition system. The surface roughness was measured by atomic force microscopy, and the composition of Ga2O3 was measured by x-ray photoelectron spectroscopy. It was found that HCl affects the growth rate, purity, and surface roughness of α-Ga2O3 films. The growth rate increased with the HCl supply. The thickness, surface roughness, and chemical state analyses indicate that three growth modes occurred depending on the Ga supply rate and HCl/Ga supply ratio and the purity was improved by optimizing the HCl/Ga supply ratio and Ga supply rate.
url	http://dx.doi.org/10.1063/5.0051050
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The effect of HCl on the α-Ga2O3 thin films fabricated by third generation mist chemical vapor deposition

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