Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified m...

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Bibliographic Details
Main Authors: Kamil Bargieł, Damian Bisewski, Janusz Zarębski
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Energies
Subjects:
c–v characteristics
jfet
modelling
silicon carbide
Online Access:https://www.mdpi.com/1996-1073/13/1/187

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