Insights into radiation displacement defect in an insulated-gate bipolar transistor
The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology. DC characteristics, breakdown voltage, and power dissipation are analyzed according to the position, energy, and types of trap caused by th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0041444 |