Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency

VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...

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Main Authors: Yu Zeng, Zhan Shen, Xu Wu, Dong-Xiao Wang, Ye-Liang Wang, Ya-Li Sun, Li Wu, Yi Zhang
Format: Article
Language:English
Published: Elsevier 2021-05-01
Series:Journal of Materiomics
Subjects:
Transition metal dichalcogenides
Optoelectronic device
VSe2
CZTSSe solar cell
Back interface
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847820305165
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spelling doaj-ed819d0ea23f45d8889d537b07e5d62a2021-03-17T04:15:09ZengElsevierJournal of Materiomics2352-84782021-05-0173470477Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiencyYu Zeng0Zhan Shen1Xu Wu2Dong-Xiao Wang3Ye-Liang Wang4Ya-Li Sun5Li Wu6Yi Zhang7Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaSchool of Information and Electronics, Beijing Institute of Technology, Beijing, 100081, China; Corresponding author.Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaSchool of Information and Electronics, Beijing Institute of Technology, Beijing, 100081, ChinaTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, ChinaKey Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin, 300071, ChinaTianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology, And Renewable Energy Conversion and Storage Center, Nankai University, Nankai University, Tianjin, 300350, China; Corresponding author.VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4 (CZTSSe) film. We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%. Besides improving the carrier transport in the back contact region, the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer. The present work not only provides an effective method to improve the performance of the optoelectronic device, but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation.http://www.sciencedirect.com/science/article/pii/S2352847820305165Transition metal dichalcogenidesOptoelectronic deviceVSe2CZTSSe solar cellBack interface
collection DOAJ
language English
format Article
sources DOAJ
author Yu Zeng
Zhan Shen
Xu Wu
Dong-Xiao Wang
Ye-Liang Wang
Ya-Li Sun
Li Wu
Yi Zhang
spellingShingle Yu Zeng
Zhan Shen
Xu Wu
Dong-Xiao Wang
Ye-Liang Wang
Ya-Li Sun
Li Wu
Yi Zhang
Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
Journal of Materiomics
Transition metal dichalcogenides
Optoelectronic device
VSe2
CZTSSe solar cell
Back interface
author_facet Yu Zeng
Zhan Shen
Xu Wu
Dong-Xiao Wang
Ye-Liang Wang
Ya-Li Sun
Li Wu
Yi Zhang
author_sort Yu Zeng
title Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
title_short Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
title_full Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
title_fullStr Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
title_full_unstemmed Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
title_sort back contact modification of the optoelectronic device with transition metal dichalcogenide vse2 film drives solar cell efficiency
publisher Elsevier
series Journal of Materiomics
issn 2352-8478
publishDate 2021-05-01
description VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4 (CZTSSe) film. We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%. Besides improving the carrier transport in the back contact region, the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer. The present work not only provides an effective method to improve the performance of the optoelectronic device, but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation.
topic Transition metal dichalcogenides
Optoelectronic device
VSe2
CZTSSe solar cell
Back interface
url http://www.sciencedirect.com/science/article/pii/S2352847820305165
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AT zhanshen backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
AT xuwu backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
AT dongxiaowang backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
AT yeliangwang backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
AT yalisun backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
AT liwu backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
AT yizhang backcontactmodificationoftheoptoelectronicdevicewithtransitionmetaldichalcogenidevse2filmdrivessolarcellefficiency
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