4H-SiC N-Channel JFET for Operation in High-Temperature Environments

Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resi...

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Main Authors:	Wei-Chen Lien, Nattapol Damrongplasit, John H. Paredes, Debbie G. Senesky, Tsu-Jae K. Liu, Albert P. Pisano
Format:	Article
Language:	English
Published:	IEEE 2014-01-01
Series:	IEEE Journal of the Electron Devices Society
Online Access:	https://ieeexplore.ieee.org/document/6892931/

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spelling	doaj-ec0cee0a0010495e94845a0350195f4b2021-03-29T18:42:32ZengIEEEIEEE Journal of the Electron Devices Society2168-67342014-01-012616416710.1109/JEDS.2014.235513268929314H-SiC N-Channel JFET for Operation in High-Temperature EnvironmentsWei-Chen Lien0Nattapol Damrongplasit1John H. Paredes2Debbie G. Senesky3Tsu-Jae K. Liu4Albert P. Pisano5Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USADepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USADepartment of Materials Science and Engineering, University of California, Merced, Merced, CA, USADepartment of Aeronautics and Astronautics, Stanford University, Stanford, CA, USADepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USADepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USALateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 × 10<sup>-3</sup> Ω cm<sup>2</sup> at 600°C. The on/off drain saturation current ratio and intrinsic gain at 600°C are 1.53 × 10<sup>3</sup> and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.https://ieeexplore.ieee.org/document/6892931/
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Wei-Chen Lien Nattapol Damrongplasit John H. Paredes Debbie G. Senesky Tsu-Jae K. Liu Albert P. Pisano
spellingShingle	Wei-Chen Lien Nattapol Damrongplasit John H. Paredes Debbie G. Senesky Tsu-Jae K. Liu Albert P. Pisano 4H-SiC N-Channel JFET for Operation in High-Temperature Environments IEEE Journal of the Electron Devices Society
author_facet	Wei-Chen Lien Nattapol Damrongplasit John H. Paredes Debbie G. Senesky Tsu-Jae K. Liu Albert P. Pisano
author_sort	Wei-Chen Lien
title	4H-SiC N-Channel JFET for Operation in High-Temperature Environments
title_short	4H-SiC N-Channel JFET for Operation in High-Temperature Environments
title_full	4H-SiC N-Channel JFET for Operation in High-Temperature Environments
title_fullStr	4H-SiC N-Channel JFET for Operation in High-Temperature Environments
title_full_unstemmed	4H-SiC N-Channel JFET for Operation in High-Temperature Environments
title_sort	4h-sic n-channel jfet for operation in high-temperature environments
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2014-01-01
description	Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 × 10<sup>-3</sup> Ω cm<sup>2</sup> at 600°C. The on/off drain saturation current ratio and intrinsic gain at 600°C are 1.53 × 10<sup>3</sup> and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.
url	https://ieeexplore.ieee.org/document/6892931/
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4H-SiC N-Channel JFET for Operation in High-Temperature Environments

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