Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

<p>Abstract</p> <p>In-situ annealing at a high temperature of 640&#176;C was performed for a low temperature grown Si capping layer, which was grown at 300&#176;C on SiGe self-assembled quantum dots with a thickness of 50 nm. Square nanopits, with a depth of about 8 nm and...

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Bibliographic Details
Main Authors: Cui Jian, Lin Jian, Wu Yue, Fan Yong, Zhong Zhenyang, Yang Xin, Jiang Zui
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Subjects:
Nanopit
Quantum dot
Capping layer
SiGe
Strain energy
Relaxation
Surface energy
Online Access:http://www.nanoscalereslett.com/content/6/1/59

Internet

http://www.nanoscalereslett.com/content/6/1/59

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