Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs

Multiple-Submicron Channel Array Gate-Recessed AlGaN/GaN Fin-MOSHEMTs

In this paper, the multiple-submicron channel array gate-recessed AlGaN/GaN fin-metal-oxide-semiconductor high-electron mobility transistors (fin-MOSHEMTs) were fabricated using the photoelectrochemical oxidation method, the photoelectrochemical etching method, and the He-Cd laser interference photo...

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Bibliographic Details
Main Authors: Ching-Ting Lee, Hung-Yin Juo
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
fin-channel structure
laser interference photolithography method
multiple-submicron channel array
photoelectrochemical method
Online Access:https://ieeexplore.ieee.org/document/8239583/

Internet

https://ieeexplore.ieee.org/document/8239583/

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