Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

We experimentally evaluate the influence of a hydrogen ion implantation (I/I) dose on the physical and electrical properties of Ge-on-insulator (GOI) films fabricated by the smart-cut process with the two doses of 1 × 1017 cm−2 and 4 × 1016 cm−2. It is found that thermal annealing is effective in im...

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Bibliographic Details
Main Authors: C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka, S. Takagi
Format: Article
Language:English
Published: AIP Publishing LLC 2020-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5132881

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