Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process
We experimentally evaluate the influence of a hydrogen ion implantation (I/I) dose on the physical and electrical properties of Ge-on-insulator (GOI) films fabricated by the smart-cut process with the two doses of 1 × 1017 cm−2 and 4 × 1016 cm−2. It is found that thermal annealing is effective in im...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5132881 |