Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

Sheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute f...

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Main Authors: Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Activation annealing
chlorine plasma
molybdenum disulfide (MoS₂)
radio-frequency magnetron sputtering
transition metal dichalcogenide (TMDC)
Online Access:https://ieeexplore.ieee.org/document/9319671/
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spelling doaj-eb330459f5684d7a8f71012dc822f8c82021-05-27T23:00:56ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01927828510.1109/JEDS.2021.30508019319671Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor AnnealingTakuya Hamada0https://orcid.org/0000-0003-3648-7677Shigetaka Tomiya1Tetsuya Tatsumi2Masaya Hamada3https://orcid.org/0000-0002-5830-5283Taiga Horiguchi4Kuniyuki Kakushima5Kazuo Tsutsui6https://orcid.org/0000-0002-5472-5539Hitoshi Wakabayashi7https://orcid.org/0000-0001-5509-521XDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanResearch Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanResearch Institute for the Earth Inclusive Sensing, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanTokyo Institute of Technology, Yokohama, JapanInterdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, JapanDepartment of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology (Suzukakedai Campus), Yokohama, JapanSheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R<sub>sheet</sub> in the MoS<sub>2</sub> film with the Cl<sub>2</sub> plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS<sub>2</sub> film.https://ieeexplore.ieee.org/document/9319671/Activation annealingchlorine plasmamolybdenum disulfide (MoS₂)radio-frequency magnetron sputteringtransition metal dichalcogenide (TMDC)
collection DOAJ
language English
format Article
sources DOAJ
author Takuya Hamada
Shigetaka Tomiya
Tetsuya Tatsumi
Masaya Hamada
Taiga Horiguchi
Kuniyuki Kakushima
Kazuo Tsutsui
Hitoshi Wakabayashi
spellingShingle Takuya Hamada
Shigetaka Tomiya
Tetsuya Tatsumi
Masaya Hamada
Taiga Horiguchi
Kuniyuki Kakushima
Kazuo Tsutsui
Hitoshi Wakabayashi
Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
IEEE Journal of the Electron Devices Society
Activation annealing
chlorine plasma
molybdenum disulfide (MoS₂)
radio-frequency magnetron sputtering
transition metal dichalcogenide (TMDC)
author_facet Takuya Hamada
Shigetaka Tomiya
Tetsuya Tatsumi
Masaya Hamada
Taiga Horiguchi
Kuniyuki Kakushima
Kazuo Tsutsui
Hitoshi Wakabayashi
author_sort Takuya Hamada
title Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
title_short Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
title_full Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
title_fullStr Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
title_full_unstemmed Sheet Resistance Reduction of MoS&#x2082; Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing
title_sort sheet resistance reduction of mos&#x2082; film using sputtering and chlorine plasma treatment followed by sulfur vapor annealing
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2021-01-01
description Sheet resistance (R<sub>sheet</sub>) reduction of a-few-layered molybdenum disulfide (MoS<sub>2</sub>) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R<sub>sheet</sub> in the MoS<sub>2</sub> film with the Cl<sub>2</sub> plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS<sub>2</sub> film.
topic Activation annealing
chlorine plasma
molybdenum disulfide (MoS₂)
radio-frequency magnetron sputtering
transition metal dichalcogenide (TMDC)
url https://ieeexplore.ieee.org/document/9319671/
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AT shigetakatomiya sheetresistancereductionofmosx2082filmusingsputteringandchlorineplasmatreatmentfollowedbysulfurvaporannealing
AT tetsuyatatsumi sheetresistancereductionofmosx2082filmusingsputteringandchlorineplasmatreatmentfollowedbysulfurvaporannealing
AT masayahamada sheetresistancereductionofmosx2082filmusingsputteringandchlorineplasmatreatmentfollowedbysulfurvaporannealing
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AT kazuotsutsui sheetresistancereductionofmosx2082filmusingsputteringandchlorineplasmatreatmentfollowedbysulfurvaporannealing
AT hitoshiwakabayashi sheetresistancereductionofmosx2082filmusingsputteringandchlorineplasmatreatmentfollowedbysulfurvaporannealing
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