Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results

Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning <i>n</i>...

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Main Authors:	E. N. Sgourou, Y. Panayiotatos, R. V. Vovk, N. Kuganathan, A. Chroneos
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Applied Sciences
Subjects:	germanium dopants diffusion defect engineering electronic materials
Online Access:	https://www.mdpi.com/2076-3417/9/12/2454

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spelling	doaj-ea41601887ee4eb59e6f8d05de24603b2020-11-25T00:31:13ZengMDPI AGApplied Sciences2076-34172019-06-01912245410.3390/app9122454app9122454Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical ResultsE. N. Sgourou0Y. Panayiotatos1R. V. Vovk2N. Kuganathan3A. Chroneos4Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, 157 84 Athens, GreeceDepartment of Mechanical Engineering, University of West Attica, 12210 Athens, GreeceV. N. Karazin Kharkiv National University, 4 Svobody sq., 61077 Kharkiv, UkraineFaculty of Engineering, Environment, and Computing, Coventry University, Priory Street, Coventry CV1 5FB, UKFaculty of Engineering, Environment, and Computing, Coventry University, Priory Street, Coventry CV1 5FB, UKGermanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning <i>n</i>-type dopants, isovalent atoms, <i>p</i>-type dopants, and metallic and oxygen diffusion in germanium. Defect engineering strategies considered by the community over the past decade are discussed in view of their potential application to other systems.https://www.mdpi.com/2076-3417/9/12/2454germaniumdopantsdiffusiondefect engineeringelectronic materials
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	E. N. Sgourou Y. Panayiotatos R. V. Vovk N. Kuganathan A. Chroneos
spellingShingle	E. N. Sgourou Y. Panayiotatos R. V. Vovk N. Kuganathan A. Chroneos Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results Applied Sciences germanium dopants diffusion defect engineering electronic materials
author_facet	E. N. Sgourou Y. Panayiotatos R. V. Vovk N. Kuganathan A. Chroneos
author_sort	E. N. Sgourou
title	Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
title_short	Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
title_full	Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
title_fullStr	Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
title_full_unstemmed	Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
title_sort	diffusion and dopant activation in germanium: insights from recent experimental and theoretical results
publisher	MDPI AG
series	Applied Sciences
issn	2076-3417
publishDate	2019-06-01
description	Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning <i>n</i>-type dopants, isovalent atoms, <i>p</i>-type dopants, and metallic and oxygen diffusion in germanium. Defect engineering strategies considered by the community over the past decade are discussed in view of their potential application to other systems.
topic	germanium dopants diffusion defect engineering electronic materials
url	https://www.mdpi.com/2076-3417/9/12/2454
work_keys_str_mv	AT ensgourou diffusionanddopantactivationingermaniuminsightsfromrecentexperimentalandtheoreticalresults AT ypanayiotatos diffusionanddopantactivationingermaniuminsightsfromrecentexperimentalandtheoreticalresults AT rvvovk diffusionanddopantactivationingermaniuminsightsfromrecentexperimentalandtheoreticalresults AT nkuganathan diffusionanddopantactivationingermaniuminsightsfromrecentexperimentalandtheoreticalresults AT achroneos diffusionanddopantactivationingermaniuminsightsfromrecentexperimentalandtheoreticalresults
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Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results

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