Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells
The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) with an ultraviolet C (UVC) emission is investigated co...
Main Authors: | Kanako Shojiki, Ryota Ishii, Kenjiro Uesugi, Mitsuru Funato, Yoichi Kawakami, Hideto Miyake |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-12-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5125799 |
Similar Items
-
Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN Films
by: Kenjiro Uesugi, et al.
Published: (2021-08-01) -
Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing
by: Yusuke Hayashi, et al.
Published: (2021-09-01) -
Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates
by: Ryota Ishii, et al.
Published: (2020-12-01) -
Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells
by: Mitsuru Funato, et al.
Published: (2015-11-01) -
Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE
by: Katsuhiro Kishimoto, et al.
Published: (2017-04-01)