Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications
MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon...
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IFSA Publishing, S.L.
2015-03-01
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| Series: | Sensors & Transducers |
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| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2635.pdf |
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doaj-e9f7e0f56d024fe8a0d9918e4d8d20ce2020-11-25T00:11:28ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792015-03-011863134139 Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF ApplicationsElangovan R.0Usha Kiran Kommuri1School of Electronics Engineering, Vellore Institute of Technology, Chennai, TamilNadu, IndiaSchool of Electronics Engineering, Vellore Institute of Technology, Chennai, TamilNadu, IndiaMEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon substrate. The switch parameters are optimized for the lowest insertion loss and return loss. An insertion loss values of -0.1305 dB in the down state with return loss of -38 dB and -75 dB of isolation have been observed in the high frequency range.http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2635.pdfNEMSMEMS switchLow LossHigh IsolationRADAR. |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Elangovan R. Usha Kiran Kommuri |
| spellingShingle |
Elangovan R. Usha Kiran Kommuri Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications Sensors & Transducers NEMS MEMS switch Low Loss High Isolation RADAR. |
| author_facet |
Elangovan R. Usha Kiran Kommuri |
| author_sort |
Elangovan R. |
| title |
Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications |
| title_short |
Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications |
| title_full |
Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications |
| title_fullStr |
Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications |
| title_full_unstemmed |
Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications |
| title_sort |
low loss high isolation nems/mems switch for high frequency rf applications |
| publisher |
IFSA Publishing, S.L. |
| series |
Sensors & Transducers |
| issn |
2306-8515 1726-5479 |
| publishDate |
2015-03-01 |
| description |
MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon substrate. The switch parameters are optimized for the lowest insertion loss and return loss. An insertion loss values of -0.1305 dB in the down state with return loss of -38 dB and -75 dB of isolation have been observed in the high frequency range. |
| topic |
NEMS MEMS switch Low Loss High Isolation RADAR. |
| url |
http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2635.pdf |
| work_keys_str_mv |
AT elangovanr lowlosshighisolationnemsmemsswitchforhighfrequencyrfapplications AT ushakirankommuri lowlosshighisolationnemsmemsswitchforhighfrequencyrfapplications |
| _version_ |
1725403796217004032 |