Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications
MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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IFSA Publishing, S.L.
2015-03-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2635.pdf |
| Summary: | MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon substrate. The switch parameters are optimized for the lowest insertion loss and return loss. An insertion loss values of -0.1305 dB in the down state with return loss of -38 dB and -75 dB of isolation have been observed in the high frequency range. |
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| ISSN: | 2306-8515 1726-5479 |