Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced e...

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Bibliographic Details
Main Authors: Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Quantum nanostructures
III&#8211;V semiconductors
Si integration
Photoluminescence
Online Access:http://dx.doi.org/10.1007/s11671-010-9689-8

Internet

http://dx.doi.org/10.1007/s11671-010-9689-8

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