Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced e...
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Online Access: | http://dx.doi.org/10.1007/s11671-010-9689-8 |
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doaj-e97988b592774ee9bc7b33959ca349752020-11-24T23:29:04ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151016501653Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet EpitaxyIsella GChrastina DFedorov ABietti SSomaschini CSarti EKoguchi NSanguinetti S<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.</p> http://dx.doi.org/10.1007/s11671-010-9689-8Quantum nanostructuresIII–V semiconductorsSi integrationPhotoluminescence |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Isella G Chrastina D Fedorov A Bietti S Somaschini C Sarti E Koguchi N Sanguinetti S |
spellingShingle |
Isella G Chrastina D Fedorov A Bietti S Somaschini C Sarti E Koguchi N Sanguinetti S Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy Nanoscale Research Letters Quantum nanostructures III–V semiconductors Si integration Photoluminescence |
author_facet |
Isella G Chrastina D Fedorov A Bietti S Somaschini C Sarti E Koguchi N Sanguinetti S |
author_sort |
Isella G |
title |
Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy |
title_short |
Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy |
title_full |
Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy |
title_fullStr |
Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy |
title_full_unstemmed |
Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy |
title_sort |
photoluminescence study of low thermal budget iii–v nanostructures on silicon by droplet epitaxy |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2010-01-01 |
description |
<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.</p> |
topic |
Quantum nanostructures III–V semiconductors Si integration Photoluminescence |
url |
http://dx.doi.org/10.1007/s11671-010-9689-8 |
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