Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced e...

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Main Authors: Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://dx.doi.org/10.1007/s11671-010-9689-8
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spelling doaj-e97988b592774ee9bc7b33959ca349752020-11-24T23:29:04ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151016501653Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet EpitaxyIsella GChrastina DFedorov ABietti SSomaschini CSarti EKoguchi NSanguinetti S<p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature &#8804;350&#176;C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.</p> http://dx.doi.org/10.1007/s11671-010-9689-8Quantum nanostructuresIII&#8211;V semiconductorsSi integrationPhotoluminescence
collection DOAJ
language English
format Article
sources DOAJ
author Isella G
Chrastina D
Fedorov A
Bietti S
Somaschini C
Sarti E
Koguchi N
Sanguinetti S
spellingShingle Isella G
Chrastina D
Fedorov A
Bietti S
Somaschini C
Sarti E
Koguchi N
Sanguinetti S
Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet Epitaxy
Nanoscale Research Letters
Quantum nanostructures
III&#8211;V semiconductors
Si integration
Photoluminescence
author_facet Isella G
Chrastina D
Fedorov A
Bietti S
Somaschini C
Sarti E
Koguchi N
Sanguinetti S
author_sort Isella G
title Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet Epitaxy
title_short Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet Epitaxy
title_full Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet Epitaxy
title_fullStr Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet Epitaxy
title_full_unstemmed Photoluminescence Study of Low Thermal Budget III&#8211;V Nanostructures on Silicon by Droplet Epitaxy
title_sort photoluminescence study of low thermal budget iii&#8211;v nanostructures on silicon by droplet epitaxy
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2010-01-01
description <p>Abstract</p> <p>We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature &#8804;350&#176;C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.</p>
topic Quantum nanostructures
III&#8211;V semiconductors
Si integration
Photoluminescence
url http://dx.doi.org/10.1007/s11671-010-9689-8
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