The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors

The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors

The electronic states of carriers between two concentric spheres of Kane-type semiconductor are theoretically investigated and compared with the results of the parabolic band approximation. Calculations are performed for a hard-wall confinement potential and the eigenstates and the eigenvalues of th...

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Main Authors: Arif Babayev, Sukru Cakmaktepe, Deniz Turkoz
Format: Article
Language:English
Published: Hindawi Limited 2006-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/JNM/2006/57519
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spelling doaj-e8e838aeb6ca496e9b5a337ab33edb1c2020-11-24T23:33:01ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292006-01-01200610.1155/JNM/2006/5751957519The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type SemiconductorsArif Babayev0Sukru Cakmaktepe1Deniz Turkoz2Institute of Physics, Azerbaijan Academy of Sciences, Baku 370143, AzerbaijanDepartment of Physics, University of Suleyman Demirel, Isparta 32260, TurkeyDepartment of Physics, University of Suleyman Demirel, Isparta 32260, TurkeyThe electronic states of carriers between two concentric spheres of Kane-type semiconductor are theoretically investigated and compared with the results of the parabolic band approximation. Calculations are performed for a hard-wall confinement potential and the eigenstates and the eigenvalues of the Kane Hamiltonian are obtained. Taking into account the real band structure (strong spin-orbital interaction, narrow band gap), the size dependence of the energy of electrons, light holes, and spin-orbital splitting holes in InSb semiconductor concentric spheres are calculated. According to the obtained results both in parabolic and nonparabolic (Kane model) cases, the electron energy levels come close to each other with the increasing of the radius.http://dx.doi.org/10.1155/JNM/2006/57519
collection DOAJ
language English
format Article
sources DOAJ
author Arif Babayev
Sukru Cakmaktepe
Deniz Turkoz
spellingShingle Arif Babayev
Sukru Cakmaktepe
Deniz Turkoz
The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors
Journal of Nanomaterials
author_facet Arif Babayev
Sukru Cakmaktepe
Deniz Turkoz
author_sort Arif Babayev
title The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors
title_short The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors
title_full The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors
title_fullStr The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors
title_full_unstemmed The Energy Spectrum of Carriers between Two Concentric Spheres of Kane-Type Semiconductors
title_sort energy spectrum of carriers between two concentric spheres of kane-type semiconductors
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2006-01-01
description The electronic states of carriers between two concentric spheres of Kane-type semiconductor are theoretically investigated and compared with the results of the parabolic band approximation. Calculations are performed for a hard-wall confinement potential and the eigenstates and the eigenvalues of the Kane Hamiltonian are obtained. Taking into account the real band structure (strong spin-orbital interaction, narrow band gap), the size dependence of the energy of electrons, light holes, and spin-orbital splitting holes in InSb semiconductor concentric spheres are calculated. According to the obtained results both in parabolic and nonparabolic (Kane model) cases, the electron energy levels come close to each other with the increasing of the radius.
url http://dx.doi.org/10.1155/JNM/2006/57519
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