Coupling p+n Field-Effect Transistor Circuits for Low Concentration Methane Gas Detection

Nowadays, the detection of low concentration combustible methane gas has attracted great concern. In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. By optimizing the load resistance (RL), the response to methane of the commercial MP-...

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Bibliographic Details
Main Authors: Xinyuan Zhou, Liping Yang, Yuzhi Bian, Xiang Ma, Ning Han, Yunfa Chen
Format: Article
Language:English
Published: MDPI AG 2018-03-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/18/3/787
Description
Summary:Nowadays, the detection of low concentration combustible methane gas has attracted great concern. In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. By optimizing the load resistance (RL), the response to methane of the commercial MP-4 sensor can be magnified ~15 times using this coupling circuit. At the same time, it decreases the limit of detection (LOD) from several hundred ppm to ~10 ppm methane, with the apparent response of 7.0 ± 0.2 and voltage signal of 1.1 ± 0.1 V. This is promising for the detection of trace concentrations of methane gas to avoid an accidental explosion because its lower explosion limit (LEL) is ~5%. The mechanism of this coupling circuit is that the n-type FET firstly generates an output voltage (VOUT) amplification process caused by the gate voltage-induced resistance change of the FET. Then, the p-type FET continues to amplify the signal based on the previous VOUT amplification process.
ISSN:1424-8220