Construction of models of microwave transistors when changing the probing signal in the frequency and power range
It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a tran...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2019-01-01
|
| Series: | ITM Web of Conferences |
| Online Access: | https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_01010.pdf |