Construction of models of microwave transistors when changing the probing signal in the frequency and power range

It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a tran...

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Main Authors:	Evseev Vladimir, Ivlev Mikhail, Morugin Stanislav, Nikulin Sergey
Format:	Article
Language:	English
Published:	EDP Sciences 2019-01-01
Series:	ITM Web of Conferences
Online Access:	https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_01010.pdf

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spelling	doaj-e89758b0eab548f3b5311aeb389a35b02021-03-02T07:43:13ZengEDP SciencesITM Web of Conferences2271-20972019-01-01300101010.1051/itmconf/20193001010itmconf_crimico2019_01010Construction of models of microwave transistors when changing the probing signal in the frequency and power rangeEvseev Vladimir0Ivlev Mikhail1Morugin Stanislav2Nikulin SergeyArzamas Engineering Design Bureau LLCAlekseev Nizhny Novgorod State Technical UniversityAlekseev Nizhny Novgorod State Technical UniversityIt is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a transistor with a load is reduced to solving a nonlinear equation with respect to a previously unknown phase difference, after which the load impedance is selected from the complex-conjugate matching condition.https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_01010.pdf
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Evseev Vladimir Ivlev Mikhail Morugin Stanislav Nikulin Sergey
spellingShingle	Evseev Vladimir Ivlev Mikhail Morugin Stanislav Nikulin Sergey Construction of models of microwave transistors when changing the probing signal in the frequency and power range ITM Web of Conferences
author_facet	Evseev Vladimir Ivlev Mikhail Morugin Stanislav Nikulin Sergey
author_sort	Evseev Vladimir
title	Construction of models of microwave transistors when changing the probing signal in the frequency and power range
title_short	Construction of models of microwave transistors when changing the probing signal in the frequency and power range
title_full	Construction of models of microwave transistors when changing the probing signal in the frequency and power range
title_fullStr	Construction of models of microwave transistors when changing the probing signal in the frequency and power range
title_full_unstemmed	Construction of models of microwave transistors when changing the probing signal in the frequency and power range
title_sort	construction of models of microwave transistors when changing the probing signal in the frequency and power range
publisher	EDP Sciences
series	ITM Web of Conferences
issn	2271-2097
publishDate	2019-01-01
description	It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a transistor with a load is reduced to solving a nonlinear equation with respect to a previously unknown phase difference, after which the load impedance is selected from the complex-conjugate matching condition.
url	https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_01010.pdf
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Construction of models of microwave transistors when changing the probing signal in the frequency and power range

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