Construction of models of microwave transistors when changing the probing signal in the frequency and power range
It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a tran...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2019-01-01
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| Series: | ITM Web of Conferences |
| Online Access: | https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_01010.pdf |
| Summary: | It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a transistor with a load is reduced to solving a nonlinear equation with respect to a previously unknown phase difference, after which the load impedance is selected from the complex-conjugate matching condition. |
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| ISSN: | 2271-2097 |