Determination of Diffusion Coefficient of Copper in ZnO (001) Single Crystals at 1000 °C

• Main Authors: Primavera López-Salazar, Gabriel Juárez-Díaz, Javier Martínez-Juárez, José A. Luna-López, Ramón Peña Sierra, Yuri Koudriavtsev, Carlos Palomino-Jiménez, Angel. P. Rodríguez-Victoria
• Format: Article
• Language: English
• Published: MDPI AG 2019-03-01
• Series: Crystals
• Subjects: Zinc oxide; copper diffusion; SIMS; hall effect; PL
• Online Access: http://www.mdpi.com/2073-4352/9/3/131

Copper from a solid source was diffused into undoped n-type bulk ZnO (001) single crystals at 1000 °C under a nitrogen atmosphere at different diffusion times. The Cu diffusion profiles were obtained by Secondary ion mass spectroscopy (SIMS), and the fitting reveals a diffusion case from a constant concentration source. A value for the diffusion coefficient of 2.42(±0.2) × 10−12 cm2∙s−1 was obtained. Electrical measurements present an increment of carrier concentration with diffusion time, but remains n-type which indicates an increase in the donor levels produced by structural defects in ZnO. Photoluminescence (PL) spectra showed an increment of green emission intensity associated with Cu incorporation.