Interfacial free energies determined from binary embedded alloy nanocluster geometry

The equilibrium geometries of embedded binary eutectic alloy nanostructures are used to determine the interfacial free energies between two phases of a strongly segregating alloy and the matrix. The solid Ge-SiO2 interfacial free energy at 600°C is determined to be 0.82–0.99 J/m2, in good agreement...

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Main Authors: C. N. Boswell-Koller, S. J. Shin, J. Guzman, M. P. Sherburne, K. C. Bustillo, C. A. Sawyer, J. P. Mastandrea, J. W. Beeman, J. W. Ager III, E. E. Haller, D. C. Chrzan
Format: Article
Language:English
Published: AIP Publishing LLC 2013-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4828937
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spelling doaj-e804784832534fdfa4fe1475a02e262d2020-11-24T21:30:41ZengAIP Publishing LLCAPL Materials2166-532X2013-11-0115052105052105-610.1063/1.4828937009305APMInterfacial free energies determined from binary embedded alloy nanocluster geometryC. N. Boswell-Koller0S. J. Shin1J. Guzman2M. P. Sherburne3K. C. Bustillo4C. A. Sawyer5J. P. Mastandrea6J. W. Beeman7J. W. Ager III8E. E. Haller9D. C. Chrzan10Department of Chemistry and Biochemistry, Ohio University, Athens, Ohio 45701, USACondensed Matter and Materials Divison, Lawrence Livermore National Laboratory, Livermore, California 94550, USAMaxim Integrated Products, San Antonio, Texas 78251, USADepartment of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USADepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USADepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USADepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USAMaterials Sciences Divison, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAMaterials Sciences Divison, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USADepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USADepartment of Materials Science and Engineering, University of California, Berkeley, California 94720, USAThe equilibrium geometries of embedded binary eutectic alloy nanostructures are used to determine the interfacial free energies between two phases of a strongly segregating alloy and the matrix. The solid Ge-SiO2 interfacial free energy at 600°C is determined to be 0.82–0.99 J/m2, in good agreement with estimates obtained from stress relaxation experiments. http://dx.doi.org/10.1063/1.4828937
collection DOAJ
language English
format Article
sources DOAJ
author C. N. Boswell-Koller
S. J. Shin
J. Guzman
M. P. Sherburne
K. C. Bustillo
C. A. Sawyer
J. P. Mastandrea
J. W. Beeman
J. W. Ager III
E. E. Haller
D. C. Chrzan
spellingShingle C. N. Boswell-Koller
S. J. Shin
J. Guzman
M. P. Sherburne
K. C. Bustillo
C. A. Sawyer
J. P. Mastandrea
J. W. Beeman
J. W. Ager III
E. E. Haller
D. C. Chrzan
Interfacial free energies determined from binary embedded alloy nanocluster geometry
APL Materials
author_facet C. N. Boswell-Koller
S. J. Shin
J. Guzman
M. P. Sherburne
K. C. Bustillo
C. A. Sawyer
J. P. Mastandrea
J. W. Beeman
J. W. Ager III
E. E. Haller
D. C. Chrzan
author_sort C. N. Boswell-Koller
title Interfacial free energies determined from binary embedded alloy nanocluster geometry
title_short Interfacial free energies determined from binary embedded alloy nanocluster geometry
title_full Interfacial free energies determined from binary embedded alloy nanocluster geometry
title_fullStr Interfacial free energies determined from binary embedded alloy nanocluster geometry
title_full_unstemmed Interfacial free energies determined from binary embedded alloy nanocluster geometry
title_sort interfacial free energies determined from binary embedded alloy nanocluster geometry
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2013-11-01
description The equilibrium geometries of embedded binary eutectic alloy nanostructures are used to determine the interfacial free energies between two phases of a strongly segregating alloy and the matrix. The solid Ge-SiO2 interfacial free energy at 600°C is determined to be 0.82–0.99 J/m2, in good agreement with estimates obtained from stress relaxation experiments.
url http://dx.doi.org/10.1063/1.4828937
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