Effects of process parameters on μc - Si1 − XGeX:H solar cells performance and material properties
On our way to develop a very thin and highly efficient triple-junction thin-film solar cell in a-Si:H/μc-Si:H/μc-SiGe:H configuration and μc-SiGe:H single cell samples were prepared and characterized using an industrial relevant 13.56 MHz 0.5 nm/s process on an industrial like 30 × 30 cm2 P...
Main Authors: | Reininghaus Nies, Kellermann Martin, von Maydell Karsten, Agert Carsten |
---|---|
Format: | Article |
Language: | English |
Published: |
EDP Sciences
2015-01-01
|
Series: | EPJ Photovoltaics |
Online Access: | http://dx.doi.org/10.1051/epjpv/2015002 |
Similar Items
-
Study of N-type Microcrystalline Silicon Oxide as Intermediate Reflecting Layer for a-Si:H/a-Si1-XGeX:H Tandem Solar Cells
by: Chien, Chih-Chun, et al.
Published: (2013) -
a-Si1-xGex:H/a-Si(Ge):H multilayer solar cells
by: Chun-Yao Hou, et al.
Published: (2011) -
Enhancement of Spectral Response in μc-Si1-xGex:H Thin-Film Solar Cells with a-Si:H/μc-Si:H P-Type Window Layers
by: Yen-Tang Huang, et al.
Published: (2015-01-01) -
Optimization of μc-Si1−xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality
by: Yen-Tang Huang, et al.
Published: (2015-01-01) -
The study of silicide on Si/Si1-XGeX interface
by: Yong-Xiang Lin, et al.
Published: (2004)