| Summary: | On our way to develop a very thin and highly efficient triple-junction thin-film solar cell in a-Si:H/μc-Si:H/μc-SiGe:H configuration and μc-SiGe:H single cell samples were prepared and characterized using an industrial relevant 13.56 MHz 0.5 nm/s process on an industrial like 30 × 30 cm2 PECVD tool. To attain a better understanding of the μc-SiGe:H absorber we varied process pressure, germane flow, dilution and silane flow while looking at the electrical and material properties. By realizing a total absorber thickness less than 2 μm for high efficiency cell concepts in triple technology, our intention is to develop an industrial relevant process with attractive fabrication times by benefiting from the enhanced absorption of μc-SiGe:H compared to μc-Si:H.
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