The Effect of Heat Treatment on the Microstructure and Mechanical Properties of 2D Nanostructured Au/NiFe System

• Main Authors: Tatiana Zubar, Valery Fedosyuk, Daria Tishkevich, Oleg Kanafyev, Ksenia Astapovich, Artem Kozlovskiy, Maxim Zdorovets, Denis Vinnik, Svetlana Gudkova, Egor Kaniukov, Antonio Sergio B. Sombra, Di Zhou, Rajshree B. Jotania, Charanjeet Singh, Sergei Trukhanov, Alex Trukhanov
• Format: Article
• Language: English
• Published: MDPI AG 2020-05-01
• Series: Nanomaterials
• Subjects: pulsed electrodeposition; multilayer system; NiFe nanograins; heat treatment; surface microstructure; nanohardness
• Online Access: https://www.mdpi.com/2079-4991/10/6/1077

Nanostructured NiFe film was obtained on silicon with a thin gold sublayer via pulsed electrodeposition and annealed at a temperature from 100 to 400 °C in order to study the effect of heat treatment on the surface microstructure and mechanical properties. High-resolution atomic force microscopy made it possible to trace stepwise evolving microstructure under the influence of heat treatment. It was found that NiFe film grains undergo coalescence twice—at ~100 and ~300 °C—in the process of a gradual increase in grain size. The mechanical properties of the Au/NiFe nanostructured system have been investigated by nanoindentation at two various indentation depths, 10 and 50 nm. The results showed the opposite effect of heat treatment on the mechanical properties in the near-surface layer and in the material volume. Surface homogenization in combination with oxidation activation leads to abnormal strengthening and hardening-up of the near-surface layer. At the same time, a nonlinear decrease in hardness and Young’s modulus with increasing temperature of heat treatment characterizes the internal volume of nanostructured NiFe. An explanation of this phenomenon was found in the complex effect of changing the ratio of grain volume/grain boundaries and increasing the concentration of thermally activated diffuse gold atoms from the sublayer to the NiFe film.