A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology

This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and e...

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Main Authors: Dixian Zhao, Yongran Yi
Format: Article
Language:English
Published: Hindawi-Wiley 2018-01-01
Series:Wireless Communications and Mobile Computing
Online Access:http://dx.doi.org/10.1155/2018/8234615
id doaj-e77d538d93c541c2b5a0c3cfa46c5089
record_format Article
spelling doaj-e77d538d93c541c2b5a0c3cfa46c50892020-11-25T02:56:38ZengHindawi-WileyWireless Communications and Mobile Computing1530-86691530-86772018-01-01201810.1155/2018/82346158234615A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT TechnologyDixian Zhao0Yongran Yi1National Mobile Communication Research Laboratory, School of Information Science and Engineering, Southeast University, Nanjing 211189, ChinaNational Mobile Communication Research Laboratory, School of Information Science and Engineering, Southeast University, Nanjing 211189, ChinaThis paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.http://dx.doi.org/10.1155/2018/8234615
collection DOAJ
language English
format Article
sources DOAJ
author Dixian Zhao
Yongran Yi
spellingShingle Dixian Zhao
Yongran Yi
A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
Wireless Communications and Mobile Computing
author_facet Dixian Zhao
Yongran Yi
author_sort Dixian Zhao
title A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
title_short A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
title_full A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
title_fullStr A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
title_full_unstemmed A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
title_sort 0.45 w 18% pae e-band power amplifier in 100 nm ingaas phemt technology
publisher Hindawi-Wiley
series Wireless Communications and Mobile Computing
issn 1530-8669
1530-8677
publishDate 2018-01-01
description This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.
url http://dx.doi.org/10.1155/2018/8234615
work_keys_str_mv AT dixianzhao a045w18paeebandpoweramplifierin100nmingaasphemttechnology
AT yongranyi a045w18paeebandpoweramplifierin100nmingaasphemttechnology
AT dixianzhao 045w18paeebandpoweramplifierin100nmingaasphemttechnology
AT yongranyi 045w18paeebandpoweramplifierin100nmingaasphemttechnology
_version_ 1724712995545677824

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