A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and e...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi-Wiley
2018-01-01
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| Series: | Wireless Communications and Mobile Computing |
| Online Access: | http://dx.doi.org/10.1155/2018/8234615 |
| Summary: | This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz. |
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| ISSN: | 1530-8669 1530-8677 |