Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

<p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450&#176;C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has b...

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Main Authors: Yu Ing-Song, Cheng Henry, Mashanov Vladimir, Ulyanov Vladimir, Timofeev Vyacheslav, Nikiforov Aleksandr, Pchelyakov Oleg
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/85
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spelling doaj-e6d565c8340b466984253c9c7bf5c41c2020-11-24T20:55:00ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-016185Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxyYu Ing-SongCheng HenryMashanov VladimirUlyanov VladimirTimofeev VyacheslavNikiforov AleksandrPchelyakov Oleg<p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450&#176;C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has been studied. The statistical data for the density of Ge<sub>0.96</sub>Sn<sub>0.04 </sub>nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 &#215; 10<sup>11 </sup>cm<sup>-2</sup>) with the average lateral size of 7 nm can be obtained at 250&#176;C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge<sub>1-<it>x</it></sub>Sn<it><sub>x </sub></it>heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450&#176;C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge<sub>0.96</sub>Sn<sub>0.04 </sub>films is found to depend on the temperature of the substrate.</p> http://www.nanoscalereslett.com/content/6/1/85
collection DOAJ
language English
format Article
sources DOAJ
author Yu Ing-Song
Cheng Henry
Mashanov Vladimir
Ulyanov Vladimir
Timofeev Vyacheslav
Nikiforov Aleksandr
Pchelyakov Oleg
spellingShingle Yu Ing-Song
Cheng Henry
Mashanov Vladimir
Ulyanov Vladimir
Timofeev Vyacheslav
Nikiforov Aleksandr
Pchelyakov Oleg
Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
Nanoscale Research Letters
author_facet Yu Ing-Song
Cheng Henry
Mashanov Vladimir
Ulyanov Vladimir
Timofeev Vyacheslav
Nikiforov Aleksandr
Pchelyakov Oleg
author_sort Yu Ing-Song
title Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
title_short Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
title_full Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
title_fullStr Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
title_full_unstemmed Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
title_sort formation of ge-sn nanodots on si(100) surfaces by molecular beam epitaxy
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2011-01-01
description <p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450&#176;C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has been studied. The statistical data for the density of Ge<sub>0.96</sub>Sn<sub>0.04 </sub>nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 &#215; 10<sup>11 </sup>cm<sup>-2</sup>) with the average lateral size of 7 nm can be obtained at 250&#176;C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge<sub>1-<it>x</it></sub>Sn<it><sub>x </sub></it>heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450&#176;C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge<sub>0.96</sub>Sn<sub>0.04 </sub>films is found to depend on the temperature of the substrate.</p>
url http://www.nanoscalereslett.com/content/6/1/85
work_keys_str_mv AT yuingsong formationofgesnnanodotsonsi100surfacesbymolecularbeamepitaxy
AT chenghenry formationofgesnnanodotsonsi100surfacesbymolecularbeamepitaxy
AT mashanovvladimir formationofgesnnanodotsonsi100surfacesbymolecularbeamepitaxy
AT ulyanovvladimir formationofgesnnanodotsonsi100surfacesbymolecularbeamepitaxy
AT timofeevvyacheslav formationofgesnnanodotsonsi100surfacesbymolecularbeamepitaxy
AT nikiforovaleksandr formationofgesnnanodotsonsi100surfacesbymolecularbeamepitaxy
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