Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
<p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has b...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/85 |
| Summary: | <p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has been studied. The statistical data for the density of Ge<sub>0.96</sub>Sn<sub>0.04 </sub>nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 × 10<sup>11 </sup>cm<sup>-2</sup>) with the average lateral size of 7 nm can be obtained at 250°C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge<sub>1-<it>x</it></sub>Sn<it><sub>x </sub></it>heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450°C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge<sub>0.96</sub>Sn<sub>0.04 </sub>films is found to depend on the temperature of the substrate.</p> |
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| ISSN: | 1931-7573 1556-276X |