Si-ring quantum-well GAA nanowire FET for 5 nm node CMOS integration
A novel structure for gate all-around (GAA) NW FET in the 5 nm scale has been proposed in this paper. This device consists of a germanium nanowire structure, the channel of which is surrounded by a ring-shaped silicon layer. In addition, a high-K dielectric has been used as the gate insulator. The p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0013544 |