A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analy...

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Bibliographic Details
Main Authors: Heng Zhu, Wei Chen, Jianhua Huang, Zhiyu Wang, Faxin Yu
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Electronics
Subjects:
high-efficiency
K-band
linearity enhancement
power amplifier
GaAs pHEMT
diode compensation
Online Access:https://www.mdpi.com/2079-9292/8/5/487
id doaj-e654055f4e154220a3c1a10a1f026229
record_format Article
spelling doaj-e654055f4e154220a3c1a10a1f0262292020-11-25T01:27:27ZengMDPI AGElectronics2079-92922019-04-018548710.3390/electronics8050487electronics8050487A High-Efficiency K-band MMIC Linear Amplifier Using Diode CompensationHeng Zhu0Wei Chen1Jianhua Huang2Zhiyu Wang3Faxin Yu4School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaThis paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20−22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm.https://www.mdpi.com/2079-9292/8/5/487high-efficiencyK-bandlinearity enhancementpower amplifierGaAs pHEMTdiode compensation
collection DOAJ
language English
format Article
sources DOAJ
author Heng Zhu
Wei Chen
Jianhua Huang
Zhiyu Wang
Faxin Yu
spellingShingle Heng Zhu
Wei Chen
Jianhua Huang
Zhiyu Wang
Faxin Yu
A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation
Electronics
high-efficiency
K-band
linearity enhancement
power amplifier
GaAs pHEMT
diode compensation
author_facet Heng Zhu
Wei Chen
Jianhua Huang
Zhiyu Wang
Faxin Yu
author_sort Heng Zhu
title A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation
title_short A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation
title_full A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation
title_fullStr A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation
title_full_unstemmed A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation
title_sort high-efficiency k-band mmic linear amplifier using diode compensation
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2019-04-01
description This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20−22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm.
topic high-efficiency
K-band
linearity enhancement
power amplifier
GaAs pHEMT
diode compensation
url https://www.mdpi.com/2079-9292/8/5/487
work_keys_str_mv AT hengzhu ahighefficiencykbandmmiclinearamplifierusingdiodecompensation
AT weichen ahighefficiencykbandmmiclinearamplifierusingdiodecompensation
AT jianhuahuang ahighefficiencykbandmmiclinearamplifierusingdiodecompensation
AT zhiyuwang ahighefficiencykbandmmiclinearamplifierusingdiodecompensation
AT faxinyu ahighefficiencykbandmmiclinearamplifierusingdiodecompensation
AT hengzhu highefficiencykbandmmiclinearamplifierusingdiodecompensation
AT weichen highefficiencykbandmmiclinearamplifierusingdiodecompensation
AT jianhuahuang highefficiencykbandmmiclinearamplifierusingdiodecompensation
AT zhiyuwang highefficiencykbandmmiclinearamplifierusingdiodecompensation
AT faxinyu highefficiencykbandmmiclinearamplifierusingdiodecompensation
_version_ 1725105539073966080

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