Simple Synthesis and Growth Mechanism of Core/Shell CdSe/SiOx Nanowires

• Main Authors: Guozhang Dai, Shengyi Yang, Min Yan, Qiang Wan, Qinglin Zhang, Anlian Pan, Bingsuo Zou
• Format: Article
• Language: English
• Published: Hindawi Limited 2010-01-01
• Series: Journal of Nanomaterials
• Online Access: http://dx.doi.org/10.1155/2010/427689

Core-shell-structured CdSe/SiOx nanowires were synthesized on an equilateral triangle Si (111) substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone is SiOx amorphous layer and CdSe core was grown along (001) direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphous SiOx shells, respectively.